Conduction-band tight-binding description for Si applied to P donors
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منابع مشابه
Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k ·p Versus Tight Binding
The subband structure of silicon nanowires has gained much interest recently. Nanowires with diameters below 10 nm are predicted to have a significantly altered subband structure compared with bulk silicon. The effective mass approximation fails to describe these alterings correctly, and so far the semiempirical tight binding method and first principles calculations were used to investigate the...
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تاریخ انتشار 2013